Ultrasonic atomization of graphene derivatives for heat spreader thin film deposition on silicon substrate
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چکیده
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Strained germanium thin film membrane on silicon substrate for optoelectronics.
This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+)...
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the effect of tio2 thin film on ac electrical properties of nano porous silicon substrate
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ژورنال
عنوان ژورنال: Materials Today: Proceedings
سال: 2019
ISSN: 2214-7853
DOI: 10.1016/j.matpr.2018.12.072